氧化铟锌锡净化提高TFT性能

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI:10.23919/AM-FPD.2018.8437389

Bukke Ravindra Naik, M. N. Naik, C. Avis, Jin Jang

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引用次数: 0

摘要

在本工作中，我们研究了IZTO前驱体的提纯对高k ZrOx栅绝缘子氧化TFT性能的影响。未纯化的IZTO TFT的饱和迁移率(μsat)为2.86 cm2/V，阈值电压(Vth)为0.43 V，亚阈值摆幅(SS)为112 mV/dec。，电流比ION/IOFF为~108。另一方面，纯化的IZTO TFT的μsat为5.22 cm2/V, Vth为0.36 V, SS为90 mV/dec。离子/IOFF为~108。结果表明，氧化物半导体前驱体的纯化对高性能TFT至关重要。

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Enhancement of TFT performance by purification of indium-zinc-tin oxide

In the present work, we studied the effect of purification of IZTO precursor on the performance of oxide TFT using high-k ZrOx gate insulator. The unpurified IZTO TFT showed the saturation mobility (μsat) of 2.86 cm²/V, threshold voltage (Vth) of 0.43 V, subthreshold swing (SS) of 112 mV/dec., and a current ratio ION/IOFF of ~10⁸. On the other hand, the purified IZTO TFT exhibited the μsat of 5.22 cm²/V, Vth of 0.36 V, SS of 90 mV/dec., and an ION/IOFF of ~10⁸. The results suggest that the purification of oxide semiconductor precursor is important for high performance TFT.

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2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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