六面体单元电阻式随机存取存储器的并行仿真

2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO) Pub Date : 2020-12-07 DOI:10.1109/NEMO49486.2020.9343644

Tan-Yi Li, Wenchao Chen, Dawei Wang, Q. Zhan, Guangrong Li, Kai Kang, W. Yin

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引用次数: 0

摘要

本文采用自行开发的并行计算模拟器对电阻式随机存取存储器(RRAM)的电热性能进行了研究。为了节省计算空间，采用三维六面体单元对结构进行离散化。首先对内部模拟器的有效性进行了验证，然后根据仿真结果对随机存储器阵列的热串扰效应进行了研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Parallel Simulation of Resistive Random Access Memory with Hexahedral Elements

In this work, an in-house developed parallel-computation simulator is employed to study the electrothermal performance of resistive random access memory (RRAM). To save computing storage, the 3D hexahedral elements are used to discretize the structures. The validity of the in-house simulator is investigated first, and then the thermal crosstalk effect of RRAM array is studied base on simulation results.

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来源期刊

2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)

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