{"title":"信息技术在先进系统集成中的功率性能优势","authors":"Chuei-Tang Wang, Douglas Yu","doi":"10.1109/3DIC48104.2019.9058858","DOIUrl":null,"url":null,"abstract":"Novel InFO technologies have been developed to meet high bandwidth, low power consumption and small form factor requirements for system integration with key characteristics of thin dielectric layers, fine RDL lines, 3D vertical interconnects and multi-chip integration. The powerperformance advantages of the technology from the characteristics on power integrity (PI), signal integrity (SI) and RF are studied and compared to those of organic substrate technology. For PI, the InFO with IPD (Integrated Passive Device) has 56% lower of system power delivery networking (PDN) impedance and 25% lower of the 1st voltage droop. For SI, the effect of line width on data rate and line density is studied and a record high 10 Tbps/mm of bandwidth density is obtained by the submicron RDL on InFO. For RF system integration, a 3D solenoid inductor on InFO package is demonstrated. The 3D inductor with 3 turns achieves Q-factor (quality factor) of 59 at 3GHz and the simulation and measurement results are consistent. The power-performance study indicates the InFO is a wide-spectrum application technology.","PeriodicalId":440556,"journal":{"name":"2019 International 3D Systems Integration Conference (3DIC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Power-Performance Advantages of InFO Technology for Advanced System Integration\",\"authors\":\"Chuei-Tang Wang, Douglas Yu\",\"doi\":\"10.1109/3DIC48104.2019.9058858\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel InFO technologies have been developed to meet high bandwidth, low power consumption and small form factor requirements for system integration with key characteristics of thin dielectric layers, fine RDL lines, 3D vertical interconnects and multi-chip integration. The powerperformance advantages of the technology from the characteristics on power integrity (PI), signal integrity (SI) and RF are studied and compared to those of organic substrate technology. For PI, the InFO with IPD (Integrated Passive Device) has 56% lower of system power delivery networking (PDN) impedance and 25% lower of the 1st voltage droop. For SI, the effect of line width on data rate and line density is studied and a record high 10 Tbps/mm of bandwidth density is obtained by the submicron RDL on InFO. For RF system integration, a 3D solenoid inductor on InFO package is demonstrated. The 3D inductor with 3 turns achieves Q-factor (quality factor) of 59 at 3GHz and the simulation and measurement results are consistent. The power-performance study indicates the InFO is a wide-spectrum application technology.\",\"PeriodicalId\":440556,\"journal\":{\"name\":\"2019 International 3D Systems Integration Conference (3DIC)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International 3D Systems Integration Conference (3DIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/3DIC48104.2019.9058858\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International 3D Systems Integration Conference (3DIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3DIC48104.2019.9058858","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Power-Performance Advantages of InFO Technology for Advanced System Integration
Novel InFO technologies have been developed to meet high bandwidth, low power consumption and small form factor requirements for system integration with key characteristics of thin dielectric layers, fine RDL lines, 3D vertical interconnects and multi-chip integration. The powerperformance advantages of the technology from the characteristics on power integrity (PI), signal integrity (SI) and RF are studied and compared to those of organic substrate technology. For PI, the InFO with IPD (Integrated Passive Device) has 56% lower of system power delivery networking (PDN) impedance and 25% lower of the 1st voltage droop. For SI, the effect of line width on data rate and line density is studied and a record high 10 Tbps/mm of bandwidth density is obtained by the submicron RDL on InFO. For RF system integration, a 3D solenoid inductor on InFO package is demonstrated. The 3D inductor with 3 turns achieves Q-factor (quality factor) of 59 at 3GHz and the simulation and measurement results are consistent. The power-performance study indicates the InFO is a wide-spectrum application technology.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
