单壁和多壁碳纳米管互连的射频性能分析

Debaprasad Das, H. Rahaman
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引用次数: 4

摘要

本文分析了碳纳米管(CNT)作为射频(RF) VLSI电路互连的适用性。通过计算基于互连几何的频率相关电路参数,建立了射频模型。利用所建立的模型,研究了碳纳米管互连的射频性能,并将其与铜基互连的射频性能进行了比较。结果表明,基于碳纳米管的互连能够以更短的互连长度在太赫兹频率范围内工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RF performance analysis of single- and multi-wall carbon nanotube interconnect
The work in this paper analyzes the applicability of carbon nanotube (CNT) as the interconnect for radio-frequency (RF) VLSI circuits. An RF model is developed by calculating the frequency dependent circuit parameters based on interconnect geometry. Using the developed model the RF performance of CNT based interconnects is investigated and compared to that of copper based interconnects for future technology nodes. It is shown that CNT based interconnect is capable of operating up to THz frequency range for shorter interconnect length.
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