{"title":"单壁和多壁碳纳米管互连的射频性能分析","authors":"Debaprasad Das, H. Rahaman","doi":"10.1109/INDCON.2011.6139457","DOIUrl":null,"url":null,"abstract":"The work in this paper analyzes the applicability of carbon nanotube (CNT) as the interconnect for radio-frequency (RF) VLSI circuits. An RF model is developed by calculating the frequency dependent circuit parameters based on interconnect geometry. Using the developed model the RF performance of CNT based interconnects is investigated and compared to that of copper based interconnects for future technology nodes. It is shown that CNT based interconnect is capable of operating up to THz frequency range for shorter interconnect length.","PeriodicalId":425080,"journal":{"name":"2011 Annual IEEE India Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"RF performance analysis of single- and multi-wall carbon nanotube interconnect\",\"authors\":\"Debaprasad Das, H. Rahaman\",\"doi\":\"10.1109/INDCON.2011.6139457\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The work in this paper analyzes the applicability of carbon nanotube (CNT) as the interconnect for radio-frequency (RF) VLSI circuits. An RF model is developed by calculating the frequency dependent circuit parameters based on interconnect geometry. Using the developed model the RF performance of CNT based interconnects is investigated and compared to that of copper based interconnects for future technology nodes. It is shown that CNT based interconnect is capable of operating up to THz frequency range for shorter interconnect length.\",\"PeriodicalId\":425080,\"journal\":{\"name\":\"2011 Annual IEEE India Conference\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Annual IEEE India Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INDCON.2011.6139457\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Annual IEEE India Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INDCON.2011.6139457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RF performance analysis of single- and multi-wall carbon nanotube interconnect
The work in this paper analyzes the applicability of carbon nanotube (CNT) as the interconnect for radio-frequency (RF) VLSI circuits. An RF model is developed by calculating the frequency dependent circuit parameters based on interconnect geometry. Using the developed model the RF performance of CNT based interconnects is investigated and compared to that of copper based interconnects for future technology nodes. It is shown that CNT based interconnect is capable of operating up to THz frequency range for shorter interconnect length.