{"title":"Ge/GeSiSn i型量子阱的能带结构和态密度","authors":"W. Fan","doi":"10.1117/12.861346","DOIUrl":null,"url":null,"abstract":"The band structures and density of state of tensile strained Ge/GeSiSn QWs with different Sn composition are investigated by using 6-band k.p method. The band lineups of Ge/GeSiSn are given. The hole energy dispersion curves and density of state are calculated. The results are helpful for Si photonics device design.","PeriodicalId":245973,"journal":{"name":"Southeast Asian International Advances in Micro/Nano-technology","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Band structures and density of state of Ge/GeSiSn type-I quantum wells\",\"authors\":\"W. Fan\",\"doi\":\"10.1117/12.861346\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The band structures and density of state of tensile strained Ge/GeSiSn QWs with different Sn composition are investigated by using 6-band k.p method. The band lineups of Ge/GeSiSn are given. The hole energy dispersion curves and density of state are calculated. The results are helpful for Si photonics device design.\",\"PeriodicalId\":245973,\"journal\":{\"name\":\"Southeast Asian International Advances in Micro/Nano-technology\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Southeast Asian International Advances in Micro/Nano-technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.861346\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Southeast Asian International Advances in Micro/Nano-technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.861346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Band structures and density of state of Ge/GeSiSn type-I quantum wells
The band structures and density of state of tensile strained Ge/GeSiSn QWs with different Sn composition are investigated by using 6-band k.p method. The band lineups of Ge/GeSiSn are given. The hole energy dispersion curves and density of state are calculated. The results are helpful for Si photonics device design.