考虑电离辐射效应的SPICE模型参数提取

Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014) Pub Date : 2014-09-01 DOI:10.1109/EWDTS.2014.7027055

K. Petrosyants, M. Kozhukhov

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引用次数: 2

摘要

提出了考虑总辐照剂量效应的Si双极结晶体管(BJT)和SiGe异质结双极晶体管(HBT)的通用SPICE宏观模型。描述了一种从测量数据中提取宏观模型辐射相关参数的方法。该方法的优点是参数定义简单。模拟和测量的晶体管特性非常吻合。

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SPICE model parameters extraction taking into account the ionizing radiation effects

Universal SPICE macro-model of Si bipolar junction transistor (BJT) and SiGe heterojunction bipolar transistor (HBT) taking into account total irradiation dose effects is presented. A method of macro-model radiation-dependent parameters extraction from the measured data is described. The advantage of the proposed method is simplicity of parameter definition. Simulated and measured transistor characteristics are in a good agreement.

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Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)

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