WS2/石墨烯异质结的制备工艺及输运性能

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126444

Yan Tian, Zekun Guo, H. Gan, Jun Chen, N. Xu, Fei Liu, S. Deng

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引用次数: 0

摘要

由于其在光电领域的潜在应用，WS2/石墨烯异质结近年来备受关注。但到目前为止，调节它们的工作性能仍然是研究人员面临的一大挑战。本研究成功地在硅衬底上制备了WS2/石墨烯异质结。利用STM和AFM技术对其表面形貌进行了研究。最后，将其集成到背门控MOSFET器件中，研究其工作性能。

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Fabrication technique and transportation properties of WS2/graphene heterojunction

Due to its potential applications in optoelectric area, WS2/graphene heterojunction attracts much attention in past years. But until now, modulation of their working performance is still a big challenge for the researchers. In this work, WS2/graphene heterojunctions have been sucessfully fabricated on Si substrate. Moreover, their surface configuration were researched by STM and AFM techniques. Finally, they are integrated into back-gated MOSFET devices to research their working performances.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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