LDMOSFET有效沟道长度的提取及其在建模中的应用

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) Pub Date : 2000-03-13 DOI:10.1109/ICMTS.2000.844409

K. Tsuji, K. Terada, M. Minami, K. Tanaka

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引用次数: 1

摘要

准确提取了横向双扩散MOSFET的有效沟道长度，并应用于建立其电路仿真模型，具有沟道长度等物理意义。该模型由一个简单的MOSFET、栅极电压相关电阻和三个电阻组成。结果表明，测量的电学特性与计算的电学特性误差小于5%。

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Extraction of effective LDMOSFET channel length and its application to the modeling

The effective channel length of LD (lateral double diffused) MOSFET is accurately extracted and is applied to develop its circuit simulation model, which has the physical meaning of the channel length and so on. This model is consisted of a simple MOSFET, gate-voltage dependent resistor and three resistors. It is confirmed that the errors between the measured electrical characteristics and the calculated ones are less than 5 percent.

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来源期刊

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)

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