非加工原因造成的缺陷

R. van Roijen, Bryan N. Rhoads, A. Friedman, Aurelia Suwarno-Handayana, J. Ayala, Oh-jung Kwon, Michael Carbonell
{"title":"非加工原因造成的缺陷","authors":"R. van Roijen, Bryan N. Rhoads, A. Friedman, Aurelia Suwarno-Handayana, J. Ayala, Oh-jung Kwon, Michael Carbonell","doi":"10.1109/ASMC.2019.8791773","DOIUrl":null,"url":null,"abstract":"We provide two examples of defects that caused real yield degradation on wafers, where the defects were not created during processing of the wafers. One is a case of a common non-process step unexpectedly causing a defect. The second is related to queue time, and shows that even in a modern highly controlled environment not all risks are always fully accounted for. We describe the mechanism behind the defects and provide specific solutions to the issues found. We also comment on the conditions that are most likely to make wafers susceptible to these defects and some guidelines that follow from these observations.","PeriodicalId":287541,"journal":{"name":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Defects caused by Sources other than Processing\",\"authors\":\"R. van Roijen, Bryan N. Rhoads, A. Friedman, Aurelia Suwarno-Handayana, J. Ayala, Oh-jung Kwon, Michael Carbonell\",\"doi\":\"10.1109/ASMC.2019.8791773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We provide two examples of defects that caused real yield degradation on wafers, where the defects were not created during processing of the wafers. One is a case of a common non-process step unexpectedly causing a defect. The second is related to queue time, and shows that even in a modern highly controlled environment not all risks are always fully accounted for. We describe the mechanism behind the defects and provide specific solutions to the issues found. We also comment on the conditions that are most likely to make wafers susceptible to these defects and some guidelines that follow from these observations.\",\"PeriodicalId\":287541,\"journal\":{\"name\":\"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2019.8791773\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2019.8791773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

我们提供了两个缺陷的例子,导致晶圆上的实际良率下降,其中缺陷不是在晶圆加工过程中产生的。一种是常见的非过程步骤意外导致缺陷的情况。第二个与排队时间有关,它表明,即使在现代高度控制的环境中,也不是所有的风险都能得到充分考虑。我们描述了缺陷背后的机制,并为发现的问题提供了具体的解决方案。我们还评论了最有可能使晶圆容易受到这些缺陷影响的条件,以及根据这些观察得出的一些指导方针。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Defects caused by Sources other than Processing
We provide two examples of defects that caused real yield degradation on wafers, where the defects were not created during processing of the wafers. One is a case of a common non-process step unexpectedly causing a defect. The second is related to queue time, and shows that even in a modern highly controlled environment not all risks are always fully accounted for. We describe the mechanism behind the defects and provide specific solutions to the issues found. We also comment on the conditions that are most likely to make wafers susceptible to these defects and some guidelines that follow from these observations.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信