通过MMIC应用中PZT薄膜的孔建模

2008 IEEE International RF and Microwave Conference Pub Date : 2008-12-01 DOI:10.1109/RFM.2008.4897442

R. A. Bakar, Zaiki Awang, S. Sulaiman, Nor Fazlina Mohd Lazim, Zuhani Ismail Khan

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引用次数: 1

摘要

本文报道了微波集成电路用锆钛酸铅(PZT)薄膜中通孔的性能及其影响。利用三维电磁模拟器对微波频率下的方形和圆柱形过孔进行了仿真。然后将过孔接地与PZT/Pt界面边接地的性能进行了比较。提出了等效电路模型，并提取了模型参数。仿真结果表明，与边缘接地技术(L = 10.192 nH, R = 0.074 Omega)相比，采用过孔接地技术的电感(3.848 nH)和电阻(0.017 Omega)值较低。

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Via hole modeling of PZT thin films for MMIC applications

This paper reports on the performance and effects of via holes fabricated in lead zirconate titanate (PZT) thin films intended for microwave integrated circuit applications. Square and cylindrical vias were simulated at microwave frequencies using a 3D electromagnetic simulator. The performance of via hole grounding was then compared to the edge grounding at the PZT/Pt interface. An equivalent circuit model is proposed and the models parameters are extracted. The simulation results showed that using via hole resulted in low inductance (3.848 nH) and resistance (0.017 Omega) values compared to edge grounding technique (L = 10.192 nH and R = 0.074 Omega).

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2008 IEEE International RF and Microwave Conference

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