超高频环境能量收集用PMOS RF-DC转换电路的设计与分析

Zihao Xiang, Shiying Han, Bo Liu, Huyang Peng, Zixiong Wang, Guiling Sun
{"title":"超高频环境能量收集用PMOS RF-DC转换电路的设计与分析","authors":"Zihao Xiang, Shiying Han, Bo Liu, Huyang Peng, Zixiong Wang, Guiling Sun","doi":"10.1109/ICCChinaW.2019.8849957","DOIUrl":null,"url":null,"abstract":"A PMOS RF-DC conversion circuit design for ambient energy harvesting (AEH) at UHF is presented in this paper. The output voltage and power conversion efficient (PCE) of the circuit are theoretically derived, which provides guideline for choosing the parameters of PMOS. We simulate the circuit with Multisim by varying the input RF power level from −40 dBm (0.1 µW) to −3 dBm (0.5 mW) at 2.45 GHz. The theoretical analysis is verified by the simulation results, and we can observe a 82.85% PCE, 0.11% ripple factor and −15 dBm (31.62 µW) sensitivity with 1.62 V output voltage on a 100 kΩ load resistance, which outperforms the Schottky diode based conversion circuit.","PeriodicalId":252172,"journal":{"name":"2019 IEEE/CIC International Conference on Communications Workshops in China (ICCC Workshops)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design and Analysis of a PMOS RF-DC Conversion Circuit at UHF for Ambient Energy Harvesting\",\"authors\":\"Zihao Xiang, Shiying Han, Bo Liu, Huyang Peng, Zixiong Wang, Guiling Sun\",\"doi\":\"10.1109/ICCChinaW.2019.8849957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A PMOS RF-DC conversion circuit design for ambient energy harvesting (AEH) at UHF is presented in this paper. The output voltage and power conversion efficient (PCE) of the circuit are theoretically derived, which provides guideline for choosing the parameters of PMOS. We simulate the circuit with Multisim by varying the input RF power level from −40 dBm (0.1 µW) to −3 dBm (0.5 mW) at 2.45 GHz. The theoretical analysis is verified by the simulation results, and we can observe a 82.85% PCE, 0.11% ripple factor and −15 dBm (31.62 µW) sensitivity with 1.62 V output voltage on a 100 kΩ load resistance, which outperforms the Schottky diode based conversion circuit.\",\"PeriodicalId\":252172,\"journal\":{\"name\":\"2019 IEEE/CIC International Conference on Communications Workshops in China (ICCC Workshops)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE/CIC International Conference on Communications Workshops in China (ICCC Workshops)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCChinaW.2019.8849957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE/CIC International Conference on Communications Workshops in China (ICCC Workshops)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCChinaW.2019.8849957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

提出了一种用于超高频环境能量收集(AEH)的PMOS RF-DC转换电路设计。从理论上推导了电路的输出电压和功率转换效率,为PMOS的参数选择提供了指导。我们通过在2.45 GHz下将输入射频功率水平从- 40 dBm(0.1µW)变化到- 3 dBm (0.5 mW)来模拟电路。仿真结果验证了理论分析的正确性,在100 kΩ负载电阻下,当输出电压为1.62 V时,PCE为82.85%,纹波系数为0.11%,灵敏度为- 15 dBm(31.62µW),优于基于肖特基二极管的转换电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Analysis of a PMOS RF-DC Conversion Circuit at UHF for Ambient Energy Harvesting
A PMOS RF-DC conversion circuit design for ambient energy harvesting (AEH) at UHF is presented in this paper. The output voltage and power conversion efficient (PCE) of the circuit are theoretically derived, which provides guideline for choosing the parameters of PMOS. We simulate the circuit with Multisim by varying the input RF power level from −40 dBm (0.1 µW) to −3 dBm (0.5 mW) at 2.45 GHz. The theoretical analysis is verified by the simulation results, and we can observe a 82.85% PCE, 0.11% ripple factor and −15 dBm (31.62 µW) sensitivity with 1.62 V output voltage on a 100 kΩ load resistance, which outperforms the Schottky diode based conversion circuit.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信