{"title":"一种带门控时钟调节环和浪涌电流控制的无源超高频RFID应答器的EEPROM编程控制器","authors":"R. Barnett, Jin Liu","doi":"10.1109/CICC.2007.4405760","DOIUrl":null,"url":null,"abstract":"This paper presents an EEPROM programming controller imbedded in a passive UHF RFID transponder. It generates a 14 V programming voltage for a 224-bit EEPROM memory array from a rectified voltage supply of 2-3 V. A gated clock regulation loop is proposed to keep the programming voltage constant over a wide range of received RF input power, in order to improve the write-erase endurance of the memory. A current surge control scheme is proposed to allow the EEPROM programming voltage ramping in steps, therefore, preventing the collapse of the rectified supply in the remotely powered transponder. Also presented is a nano-power switched bandgap reference to reduce die area through the reduction of Meg-ohm resistors needed for nano-power operation. Measurement results show that a 0.35 mum CMOS transponder IC provides a stable 14 V EEPROM programming voltage and consumes only 7 muW during write operation. The EEPROM programming controller occupies 0.092 mm2 die area.","PeriodicalId":130106,"journal":{"name":"2007 IEEE Custom Integrated Circuits Conference","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"An EEPROM Programming Controller for Passive UHF RFID Transponders with Gated Clock Regulation Loop and Current Surge Control\",\"authors\":\"R. Barnett, Jin Liu\",\"doi\":\"10.1109/CICC.2007.4405760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an EEPROM programming controller imbedded in a passive UHF RFID transponder. It generates a 14 V programming voltage for a 224-bit EEPROM memory array from a rectified voltage supply of 2-3 V. A gated clock regulation loop is proposed to keep the programming voltage constant over a wide range of received RF input power, in order to improve the write-erase endurance of the memory. A current surge control scheme is proposed to allow the EEPROM programming voltage ramping in steps, therefore, preventing the collapse of the rectified supply in the remotely powered transponder. Also presented is a nano-power switched bandgap reference to reduce die area through the reduction of Meg-ohm resistors needed for nano-power operation. Measurement results show that a 0.35 mum CMOS transponder IC provides a stable 14 V EEPROM programming voltage and consumes only 7 muW during write operation. The EEPROM programming controller occupies 0.092 mm2 die area.\",\"PeriodicalId\":130106,\"journal\":{\"name\":\"2007 IEEE Custom Integrated Circuits Conference\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2007.4405760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2007.4405760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25
摘要
提出了一种嵌入在无源超高频RFID应答器中的EEPROM编程控制器。它从2-3 V的整流电压电源为224位EEPROM存储器阵列产生14 V的编程电压。为了提高存储器的写擦持久性,提出了一种门控时钟调节回路,使编程电压在较大的射频输入功率范围内保持恒定。提出了一种电流浪涌控制方案,允许EEPROM编程电压逐步上升,从而防止远程供电应答器中的整流电源崩溃。本文还提出了一种纳米功率开关带隙参考,通过减少纳米功率工作所需的欧姆电阻来减少芯片面积。测量结果表明,0.35 μ m CMOS应答器IC可提供稳定的14 V EEPROM编程电压,写入时功耗仅为7 μ w。EEPROM编程控制器的芯片面积为0.092 mm2。
An EEPROM Programming Controller for Passive UHF RFID Transponders with Gated Clock Regulation Loop and Current Surge Control
This paper presents an EEPROM programming controller imbedded in a passive UHF RFID transponder. It generates a 14 V programming voltage for a 224-bit EEPROM memory array from a rectified voltage supply of 2-3 V. A gated clock regulation loop is proposed to keep the programming voltage constant over a wide range of received RF input power, in order to improve the write-erase endurance of the memory. A current surge control scheme is proposed to allow the EEPROM programming voltage ramping in steps, therefore, preventing the collapse of the rectified supply in the remotely powered transponder. Also presented is a nano-power switched bandgap reference to reduce die area through the reduction of Meg-ohm resistors needed for nano-power operation. Measurement results show that a 0.35 mum CMOS transponder IC provides a stable 14 V EEPROM programming voltage and consumes only 7 muW during write operation. The EEPROM programming controller occupies 0.092 mm2 die area.