微波功率放大器中选择性生长碳纳米管电子发射体的场发射特性

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354890

Jae-Hee Han, S. Lee, A. Berdinsky, J. Yoo, Chong-Yun Park, J. J. Choi, T. Jung, I. Han, J. M. Kim

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引用次数: 0

摘要

我们使用C/sub 2/H/sub 2/和NH/sub 3/的混合气体，在相对较低的温度(550 /spl℃)下，通过直流等离子体增强化学气相沉积(DC-PECVD)在金属衬底上直接生长了碳纳米管。在这项研究中，我们报道了碳纳米管的场发射特性取决于图案尺寸和间距。在并联二极管结构中，在10/sup -6/ Torr的真空中评估了CNTs的场发射特性。结果表明，窗口面积、窗口间距、窗口边缘尺寸等图形形态与场发射特性之间存在一定的相关性。此外，我们发现碳纳米管与衬底之间的接触电阻是碳纳米管场发射饱和的关键因素。

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Field emission properties of selectively grown carbon nanotubes for electron emitters in microwave power amplifier

We have directly grown CNTs on the metal substrates by direct-current plasma-enhanced chemical-vapor deposition (DC-PECVD) using a gas mixture of C/sub 2/H/sub 2/ and NH/sub 3/ at relatively low temperature (550 /spl deg/C). In this study, we report field emission properties of CNTs depending on pattern sizes and spacings. Field-emission characteristic of CNTs was evaluated in a vacuum of 10/sup -6/ Torr in a parallel diode configuration. It is found that there is a correlation between pattern morphologies (such as window area, spacing, and dimension of window edge, etc.) and the field-emission properties. Furthermore, we found that the contact resistance between CNTs and substrate is a crucial factor for the saturation of field emission from CNTs.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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