具有后势垒的p-GaN栅极增强模式HEMT的性能评价

2022 International Conference on Innovative Trends in Information Technology (ICITIIT) Pub Date : 2022-02-12 DOI:10.1109/ICITIIT54346.2022.9744205

Sreelekshmi P. S., Jobymol Jacob

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引用次数: 0

摘要

本文研究了InGaN和p-GaN背势垒层对p-GaN栅极增强模式HEMT电特性的影响。对基于后屏障的HEMT与传统器件的性能进行了比较分析。分析了摩尔分数和后势垒掺杂对器件性能的影响。强调了后阻挡设计在器件阈值电压工程中的作用。后阻挡层的插入有助于增加载流子约束，可以适当地作为解决在缩放器件中发现的短通道效应的解决方案。

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Performance Evaluation of p-GaN Gate Enhancement Mode HEMT with Back Barriers

The effect of InGaN and p-GaN back barrier layers on the electrical characteristics of a p-GaN gate based enhancement mode HEMT is investigated in this work. A comparative analysis on the performance of back barrier based HEMT, with that of a conventional device is performed. The impact of mole fraction and doping of back barrier on device behaviour is analysed. The scope of back barrier design on device threshold voltage engineering is highlighted. The insertion of back barrier layer helps to increase carrier confinement and can be suitably adopted as a solution for short channel effects found in scaled devices.

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2022 International Conference on Innovative Trends in Information Technology (ICITIIT)

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