以同步整流器作为测试电路,对高频功率MOSFET进行模型验证

K. Fischer, K. Shenai
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引用次数: 1

摘要

功率垂直双扩散MOSFET (DMOSFET)结构包含许多寄生结构,这些结构在基于物理的电路模拟器中难以建模。采用低压超低导通电阻垂直功率dmosfet作为高密度微电子电源的同步整流器。首先利用先进的混合器件和电路模拟器对电路进行了仿真,其中功率dmosfet表示为二维(2-D)有限元网格结构,并根据电路运行施加的终端边界条件求解半导体输运和电荷平衡方程。利用先进的行为电路模拟器,采用高频集总等效电路模型来表示dmosfet,将混合仿真结果与纯电路仿真结果进行了比较。该方法是验证复杂功率器件电路仿真模型的有力工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synchronous rectifier as a test circuit for high-frequency power MOSFET model verification
The power vertical double diffused MOSFET (DMOSFET) structure incorporates many parasitic structures which are difficult to model in physically based circuit simulators. Low voltage ultralow on-resistance vertical power DMOSFETs were used as synchronous rectifiers in a high-density microelectronics power supply. The circuit was first simulated using an advanced mixed device and circuit simulator in which the power DMOSFETs were represented as two-dimensional (2-D) finite element grid structures and semiconductor transport and charge balance equations were solved subject to terminal boundary conditions imposed by the circuit operation. Mixed simulation results are compared with pure circuit simulation results using an advanced behavioral circuit simulator in which a high-frequency lumped equivalent circuit model is used to represent the DMOSFETs. The proposed approach is a powerful tool to validate circuit simulation models of complex power devices.
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