基于C-2C梯形D/A转换器的双金属CMOS工艺

Conference Proceeding IEEE Pacific Rim Conference on Communications, Computers and Signal Processing Pub Date : 1989-06-01 DOI:10.1109/PACRIM.1989.48310

S.P. Singh, J. Hanson, J. Vlach

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引用次数: 3

摘要

提出了三种基于8位C-2C梯形的D/A转换电路，它们利用双金属CMOS工艺中可用的层间电容器，无需修改工艺。在C-2C阶梯中，电容具有相似的顺序，用于形成单独的电容器。这导致较低的单位电容器数量要求和节省硅面积

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C-2C ladder based D/A converters for two metal CMOS process

Three 8-bit C-2C ladder based D/A converter circuits are presented that utilize interlayer capacitors available in a two-metal CMOS process and need no process modification. The capacitances, being of a similar order, are used to form individual capacitors in the C-2C ladder. This leads to a lower unit capacitor number requirement and a saving of silicon area.<>

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Conference Proceeding IEEE Pacific Rim Conference on Communications, Computers and Signal Processing

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