Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices

Resistive Switching Random Access Memory (RRAM) technology is critical for advancing beyond von Neumann computing applications like neuromorphic computing. Enhancing RRAM performances is contingent on carefully controlling the properties of the switching layer material, such as composition, stoichiometry, and crystal structure. This paper reports the use of a Pulsed Laser Deposition (PLD) and post-growth annealing process to create $TaO_{x}$ films with different crystal structures, and their comprehensive characterization, including structural analysis using XRD and XPS techniques, as well as electrical characterization through I-V measurements to assess switching performance. Bipolar resistive switching dynamics is demonstrated for RRAM device stacks fabricated from both as-grown and annealed TaOx films. Additionally, electroformation, set, and reset voltage device metrics of RRAM devices are reported to increase as a result of the annealing process, which enhances the crystallization of the PLD-grown $TaO_{x}$ films.