K. Rim, E. Gusev, C. D'Emic, T. Kanarsky, H. Chen, J. Chu, J. Ott, K. Chan, D. Boyd, V. Mazzeo, B. Lee, A. Mocuta, J. Welser, S. Cohen, M. Leong, H.-S.P. Wong
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Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics
Integration of strained Si and high-K gate dielectric is demonstrated for the first time. While providing a >1000/spl times/ gate leakage reduction, strained Si NMOSFETs with HfO/sub 2/ gate dielectric exhibit 60% higher mobility than the unstrained Si device with HfO/sub 2/ gate dielectrics, and 30% higher mobility than the conventional Si NMOSFETs with SiO/sub 2/ gate dielectric (universal MOSFET mobility).
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