高截止频率SiGe HBT的最佳Ge剖面

ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364) Pub Date : 2000-09-14 DOI:10.1109/ICMMT.2000.895626

Sunghoon Kim, Kyunghae Kim, J. Yi, Hoongjoo Lee, B. Ryum

{"title":"高截止频率SiGe HBT的最佳Ge剖面","authors":"Sunghoon Kim, Kyunghae Kim, J. Yi, Hoongjoo Lee, B. Ryum","doi":"10.1109/ICMMT.2000.895626","DOIUrl":null,"url":null,"abstract":"This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's). Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. A HBT with a 15% triangular Ge profile shows a higher cut-off frequency and DC current gain than that with a 19% trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42 GHz to 84 GHz and from 200 to 600, respectively.","PeriodicalId":354225,"journal":{"name":"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optimum Ge profile for the high cut-off frequency of SiGe HBT\",\"authors\":\"Sunghoon Kim, Kyunghae Kim, J. Yi, Hoongjoo Lee, B. Ryum\",\"doi\":\"10.1109/ICMMT.2000.895626\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's). Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. A HBT with a 15% triangular Ge profile shows a higher cut-off frequency and DC current gain than that with a 19% trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42 GHz to 84 GHz and from 200 to 600, respectively.\",\"PeriodicalId\":354225,\"journal\":{\"name\":\"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2000.895626\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2000.895626","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

分析了锗线形状对SiGe异质结双极晶体管性能的影响。为了优化器件性能，利用ATLAS/BLAZE对具有梯形或三角形Ge轮廓的SiGe HBT进行了器件仿真。具有15%三角形Ge分布的HBT比具有19%梯形Ge分布的HBT具有更高的截止频率和直流电流增益。截止频率和直流增益分别从42 GHz和200 GHz增加到84 GHz和600 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Optimum Ge profile for the high cut-off frequency of SiGe HBT

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's). Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. A HBT with a 15% triangular Ge profile shows a higher cut-off frequency and DC current gain than that with a 19% trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42 GHz to 84 GHz and from 200 to 600, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)

自引率

0.00%

发文量