SDRAM——运行CPU总线速度的高性能存储器设备

A. Cosoroaba
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摘要

同步DRAM (sdram)是一种DRAM类型的产品,可以为传统DRAM无法实现的存储系统提供性能优势。这些优势基于同步I/O接口和改进的内部架构,从而实现更快的数据吞吐率。通过比较dram和sdram的各种缺失率和CPU时钟/总线时钟比率的性能估计显示出显着的系统性能改进。随着它们的进化过渡,dram正在将系统设计者的风险降至最低。这是短产品周期设计环境中的一个重要因素。通过这些设备获得的显著的系统性能改进很少或没有额外的成本。sdram还可以跟上总线速度的增加,从而缩小主存储器和cpu之间的性能差距。同步I/O,多个内部银行和高突发模式使dram更接近CPU性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SDRAM - high performance memory devices running CPU bus speeds
Synchronous DRAMs (SDRAMs)are DRAM type products that can offer an evolutionary change with performance advantages for memory systems previously unachievable with traditional DRAMs. These advantages are based on a synchronous I/O interface and improved internal architecture that enables faster data throughput rates. Performance estimations done to compare DRAMs with SDRAMs for various miss ratios and CPU clock/bus clock ratios show significant system performance improvement. With their evolutionary transition SDRAMs are minimizing the risks of system designers. This is an important factor in the short product cycle design environment. The significant system performance improvements obtained by these devices are at little or no extra cost. SDRAMs can also keep up with increasing bus speeds narrowing the performance gap between main memory and CPUs. The synchronous I/O, multiple internal banks and high burst modes are bringing SDRAMs closer that ever to CPU performance.
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