VLSI设计中泄漏电流减小技术的研究

R. Nisha, P. Dwivedi, Monica Ramteke
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引用次数: 0

摘要

在目前的情况下,设计低功耗电路已经成为一项非常重要和具有挑战性的任务,低功耗器件是当前电子工业的需要。在VLSI电路设计中,功耗和漏电存在是至关重要的设计结构,它们对电池的行为起着至关重要的作用。芯片的电源管理是主要的挑战。随着技术的不断缩小(180纳米、90纳米、45纳米),漏功率是一个至关重要的参数。由于CMOS数字集成电路的漏电流增长非常快,因此人们提出了许多降低漏电流的技术。本文综述了CMOS集成电路的各种减容展示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study on Leakage Current Reduction Technique in VLSI Design
In the present scenario, designing a circuit with low power has become very important and challenging task, low power devices are the need of present electronics industries. In VLSI circuit design, power dissipation and leakage present are the critical design structures as they show anvital role in act of the battery. Power management of chip is the major challenge. Leakage power is a crucial parameter as the technology is shrinking (180 nanometer, 90 nanometer, 45 nanometer).The leakage current is increasing very fast so numerous technique has been proposed for leakage reduction in CMOS digital integrated circuit. This review paper demonstrates the various reduction showcase for CMOS integrated circuited.
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