$300-\mu \ mathm {W}$ k波段振荡器与55纳米CMOS DDC高q开路电容

2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2018-08-01 DOI:10.1109/RFIT.2018.8524030

Sangyeop Lee, K. Takano, R. Dong, S. Amakawa, T. Yoshida, M. Fujishima

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引用次数: 0

摘要

超低功耗k波段振荡器采用55纳米CMOS深耗尽通道(DDC)技术实现，0.31 v电压电源功耗为300美元。振荡频率为17.9 GHz时，1mhz偏置相位噪声为- 97 dBc/Hz。一条异常宽的传输线被用来建造油箱电路。由这种线路组成的开路存根可以作为比标准金属-绝缘体-金属(MIM)电容器更高q值的电容器，并有助于低压运行。

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A $300-\mu \mathrm{W}$ K-Band Oscillator with High-Q Open-Stub Capacitor in 55-nm CMOS DDC

An ultra-low-power K-band oscillator, which consumes $300 \ {\mu} \mathbf{W}$ from a 0.31-V voltage supply, is implemented using a 55-nm CMOS deeply-depleted-channel (DDC) technology. For the oscillation frequency of 17.9 GHz, the 1-MHz-offset phase noise is −97 dBc/Hz. An unusually wide transmission line is used to build the tank circuit. An open stub composed of such a line turns out to work as a higher-Q capacitor than a standard metal-insulator-metal (MIM) capacitor and contributes to the low-voltage operation.

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2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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