超低功耗应用的异质场效应晶体管

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722665

Jian-Qiang Lu, M. Hurt, W. Peatman, M. Shur

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引用次数: 11

摘要

我们描述了一种基于三维栅极(金属或半导体)与二维电子气体之间的异质接触的新型场效应晶体管(fet)。异质场效应管系列(2D MESFET、2DI MESFET和2D JFET)在未来的高速、超低功耗应用中显示出巨大的前景。我们回顾了近年来的研究进展，并报道了一种新的全离子注入准异质场效应管，即coax-2D JFET。

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Heterodimensional field effect transistors for ultra low power applications

We describe a new class of field effect transistors (FETs) based on a heterodimensional contact between a three-dimensional gate (metal or semiconductor) and a two-dimensional electron gas. The heterodimensional FET family (2D MESFET, 2DI MESFET, and 2D JFET) has shown significant promise for future high speed, ultra low power applications. We review the recent developments, and report on a new fully ion implanted quasi-heterodimensional FET, the coax-2D JFET.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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