{"title":"GaN功率集成电路技术:过去、现在和未来","authors":"D. Kinzer","doi":"10.23919/ISPSD.2017.7988981","DOIUrl":null,"url":null,"abstract":"Gallium Nitride is an emerging technology that is enabling major advances in power electronics. Power integrated circuits are now emerging in the market and showing unprecedented efficiency, density, and system cost advantages. This paper reviews the beginnings of power integrated circuit techniques, leading to present implementations in advanced IC products, and forecasts future directions for the new technology.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"40","resultStr":"{\"title\":\"GaN power IC technology: Past, present, and future\",\"authors\":\"D. Kinzer\",\"doi\":\"10.23919/ISPSD.2017.7988981\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gallium Nitride is an emerging technology that is enabling major advances in power electronics. Power integrated circuits are now emerging in the market and showing unprecedented efficiency, density, and system cost advantages. This paper reviews the beginnings of power integrated circuit techniques, leading to present implementations in advanced IC products, and forecasts future directions for the new technology.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"88 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"40\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988981\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaN power IC technology: Past, present, and future
Gallium Nitride is an emerging technology that is enabling major advances in power electronics. Power integrated circuits are now emerging in the market and showing unprecedented efficiency, density, and system cost advantages. This paper reviews the beginnings of power integrated circuit techniques, leading to present implementations in advanced IC products, and forecasts future directions for the new technology.
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