基于激光结构熔融硅匹配层的GaAs上太赫兹宽带天线

2022 52nd European Microwave Conference (EuMC) Pub Date : 2022-09-27 DOI:10.23919/EuMC54642.2022.9924427

Marius Kretschmann, C. Bohn, Benjamin Nuss, Akanksha Bhutani, A. Tessmann, A. Leuther, T. Zwick

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引用次数: 0

摘要

提出了一种基于GaAs的380 GHz宽带片上天线概念。该天线利用激光加工的熔融硅匹配层实现了80%的高辐射效率和25%的阻抗带宽。基于探针的测量用于天线表征。

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THz Broadband Antenna on GaAs using Laser-structured Fused Silica Matching Layer

A broadband on-chip antenna concept at 380 GHz on GaAs is presented. The antenna achieves high radiation efficiency of 80% and an impedance bandwidth of 25% utilizing laser-processed fused silica matching layer. Probe-based measurements are performed for antenna characterization.

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来源期刊

2022 52nd European Microwave Conference (EuMC)

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