铁厚度和温度对Si:HfO2基NC-FinFET电性能的影响

2023 11th International Symposium on Electronic Systems Devices and Computing (ESDC) Pub Date : 2023-05-04 DOI:10.1109/ESDC56251.2023.10149857

Ravindra Kumar Maurya, Vivek Kumar, R. Saha, B. Bhowmick

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引用次数: 1

摘要

本文分析了掺硅HfO2 (Si:HfO2)的金属-铁电-绝缘体-半导体(MFIS)结构负电容翅片场效应晶体管(fc - finfet)的温度效应。在Sentaurus TCAD中进行了仿真，提取了各种特征。随着FE层的加入，离子比基线FinFET增加了1.5倍，SS达到53 mV/dec。该器件在Vgs = 0.95 V时提供5ms的高跨导(gm)。这些参数即SS, ION和gm等在不同的温度(250 K - 350 K，步进50 K)下进行了分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of Ferro-thickness and Temperature on Electrical Performance of Si:HfO2 based NC-FinFET

In this paper, the temperature effect on Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structured negative capacitance fin field effect transistor (NC-FinFET) Silicon doped HfO2 (Si:HfO2) is analyzed. The simulation is carried out in Sentaurus TCAD and various characteristics are extracted. With the incorporation of FE layer, the ION is increased by 1.5 times compared to baseline FinFET and SS is achieved as 53 mV/dec. The device provides a high transconductance (gm) of 5 mS at Vgs = 0.95 V. These parameters viz. SS, ION and gm etc. has been analyzed with varying temperature (250 K - 350 K with step 50 K).

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2023 11th International Symposium on Electronic Systems Devices and Computing (ESDC)

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