DRAM和NAND快闪记忆体的技术规模挑战与未来展望

Sung-Kye Park
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引用次数: 81

摘要

存储器制造商正面临着超越1xnm节点DRAM和NAND闪存的技术扩展挑战。尽管我们正在设法克服模式问题,但我们仍然在与降低成本和电力限制作斗争。本文回顾了DRAM和NAND的规模限制和挑战,并展望了高密度DRAM和3D NAND闪存的未来前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory
Memory manufactures are facing the challenges of technology scaling beyond 1xnm node DRAM and NAND flash memory. Even though we are managing to overcome patterning issue, we are still fighting against cost reduction and electrical limitation. In this paper, the scaling limitations and challenges of both DRAM and NAND are reviewed, and the future prospects with promising solutions are also addressed for high density DRAM and 3D NAND flash memory.
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