{"title":"DRAM和NAND快闪记忆体的技术规模挑战与未来展望","authors":"Sung-Kye Park","doi":"10.1109/IMW.2015.7150307","DOIUrl":null,"url":null,"abstract":"Memory manufactures are facing the challenges of technology scaling beyond 1xnm node DRAM and NAND flash memory. Even though we are managing to overcome patterning issue, we are still fighting against cost reduction and electrical limitation. In this paper, the scaling limitations and challenges of both DRAM and NAND are reviewed, and the future prospects with promising solutions are also addressed for high density DRAM and 3D NAND flash memory.","PeriodicalId":107437,"journal":{"name":"2015 IEEE International Memory Workshop (IMW)","volume":"211 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"81","resultStr":"{\"title\":\"Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory\",\"authors\":\"Sung-Kye Park\",\"doi\":\"10.1109/IMW.2015.7150307\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Memory manufactures are facing the challenges of technology scaling beyond 1xnm node DRAM and NAND flash memory. Even though we are managing to overcome patterning issue, we are still fighting against cost reduction and electrical limitation. In this paper, the scaling limitations and challenges of both DRAM and NAND are reviewed, and the future prospects with promising solutions are also addressed for high density DRAM and 3D NAND flash memory.\",\"PeriodicalId\":107437,\"journal\":{\"name\":\"2015 IEEE International Memory Workshop (IMW)\",\"volume\":\"211 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"81\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2015.7150307\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2015.7150307","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory
Memory manufactures are facing the challenges of technology scaling beyond 1xnm node DRAM and NAND flash memory. Even though we are managing to overcome patterning issue, we are still fighting against cost reduction and electrical limitation. In this paper, the scaling limitations and challenges of both DRAM and NAND are reviewed, and the future prospects with promising solutions are also addressed for high density DRAM and 3D NAND flash memory.