采用电感反馈增益补偿的GaAs 0.15 μm pHEMT高增益宽带LNA用于射电天文学应用

2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2015-08-01 DOI:10.1109/RFIT.2015.7377893

Yunshan Wang, Chau-Ching Chiong, Ji-Kang Nai, Huei Wang

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引用次数: 15

摘要

研制了一种用于射电天文应用的宽带、高增益、低噪声放大器。这项工作采用0.15 μm GaAs伪晶高电子迁移率晶体管(pHEMT)工艺实现。采用电感反馈增益补偿拓扑进行宽带设计。该LNA显示在3.2至14.7 GHz范围内的小信号增益为34.3 dB，在4.6至13.8 GHz范围内的增益变化为0.8 dB，直流功耗为45 mW。它展示了从4.6到13.8 GHz的测量噪声系数在1.3到1.6 dB之间。

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A high gain broadband LNA in GaAs 0.15-μm pHEMT process using inductive feedback gain compensation for radio astronomy applications

A broadband, high gain low noise amplifier (LNA) for radio astronomy application is developed. This work is implemented using 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. An inductive feedback gain compensation topology is applied for broadband design. This LNA shows small signal gain 34.3 dB from 3.2 to 14.7 GHz with 0.8-dB gain variation from 4.6 to 13.8 GHz and a dc consumption 45 mW. It demonstrates a measured noise figure between 1.3 and 1.6 dB from 4.6 to 13.8 GHz.

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2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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