用于锁相环的低功率高频压控振荡器

2019 6th International Conference on Signal Processing and Integrated Networks (SPIN) Pub Date : 2019-03-07 DOI:10.1109/SPIN.2019.8711626

Ravi Ranjan, A. Raman, N. Kashyap

{"title":"用于锁相环的低功率高频压控振荡器","authors":"Ravi Ranjan, A. Raman, N. Kashyap","doi":"10.1109/SPIN.2019.8711626","DOIUrl":null,"url":null,"abstract":"This paper presents NMOS-DTMOS Technique for designing ring voltage controlled oscillator (RVCO) for low power PLL application. A 1.2 GHz RVCO is designed in SCL 180nm CMOS technology. By using DTMOS technique switching of MOSFET is improved. Power switching is used to improved the power dissipation of proposed RVCO. A single ended five stage power switching RVCO is designed for frequency of 1.22 GHz with 1mW power Dissipation. The Phase Noise at 1MHz offset frequency is −94dBc/Hz.","PeriodicalId":344030,"journal":{"name":"2019 6th International Conference on Signal Processing and Integrated Networks (SPIN)","volume":"401 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Low Power and High Frequency Voltage Controlled Oscillator for PLL Application\",\"authors\":\"Ravi Ranjan, A. Raman, N. Kashyap\",\"doi\":\"10.1109/SPIN.2019.8711626\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents NMOS-DTMOS Technique for designing ring voltage controlled oscillator (RVCO) for low power PLL application. A 1.2 GHz RVCO is designed in SCL 180nm CMOS technology. By using DTMOS technique switching of MOSFET is improved. Power switching is used to improved the power dissipation of proposed RVCO. A single ended five stage power switching RVCO is designed for frequency of 1.22 GHz with 1mW power Dissipation. The Phase Noise at 1MHz offset frequency is −94dBc/Hz.\",\"PeriodicalId\":344030,\"journal\":{\"name\":\"2019 6th International Conference on Signal Processing and Integrated Networks (SPIN)\",\"volume\":\"401 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 6th International Conference on Signal Processing and Integrated Networks (SPIN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPIN.2019.8711626\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 6th International Conference on Signal Processing and Integrated Networks (SPIN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPIN.2019.8711626","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文提出了采用NMOS-DTMOS技术设计低功耗环锁相环压控振荡器(RVCO)。采用SCL 180nm CMOS技术设计了1.2 GHz RVCO。利用DTMOS技术改进了MOSFET的开关。采用功率开关技术改善了RVCO的功耗。设计了一种单端五级功率开关RVCO，工作频率为1.22 GHz，功耗为1mW。偏移1MHz时的相位噪声为- 94dBc/Hz。

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Low Power and High Frequency Voltage Controlled Oscillator for PLL Application

This paper presents NMOS-DTMOS Technique for designing ring voltage controlled oscillator (RVCO) for low power PLL application. A 1.2 GHz RVCO is designed in SCL 180nm CMOS technology. By using DTMOS technique switching of MOSFET is improved. Power switching is used to improved the power dissipation of proposed RVCO. A single ended five stage power switching RVCO is designed for frequency of 1.22 GHz with 1mW power Dissipation. The Phase Noise at 1MHz offset frequency is −94dBc/Hz.

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2019 6th International Conference on Signal Processing and Integrated Networks (SPIN)

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