0.18 /spl mu/m CMOS中的多ghz环形和LC压控振荡器

Y. A. Eken, J. Uyemura
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引用次数: 13

摘要

本文介绍了用于多ghz通信系统的环形和LC压控振荡器的比较。在相同的芯片上实现了多ghz CMOS环和LC压控振荡器,并在相似的条件下进行了测试,以进行公平的比较。原型芯片采用0.18 /spl μ m CMOS工艺制造,包括三级环形和对称LC压控振荡器,旨在进行比较。环形VCO在6.1 GHz的振荡频率下耗散50 mW,并显示-97.5 dBc/Hz的相位噪声(@ 1 MHz)。LC压控振荡器的最大频率为3ghz,调谐范围为46%,使用3.6 mW时相位噪声为-111.4dBc/Hz (@ 1mhz)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multiple-GHz ring and LC VCOs in 0.18 /spl mu/m CMOS
This work presents a comparison of the ring and LC VCOs to be used in multiple-GHz communication systems. Multiple-GHz CMOS ring and LC VCOs are implemented on the same chip and tested under similar conditions for a fair comparison. The prototype chip was fabricated using a 0.18 /spl mu/m CMOS process and includes three-stage ring and symmetrical LC VCOs aimed for this comparison. The ring VCO dissipates 50 mW at an oscillation frequency of 6.1 GHz, and exhibits -97.5 dBc/Hz phase noise (@ 1 MHz). The LC VCO has a maximum frequency of 3 GHz with a 46% tuning range and has -111.4dBc/Hz phase noise (@1 MHz) while using 3.6 mW.
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