用于移动基站接收机的2ghz频段低温冷却GaN HEMT放大器

2007 European Conference on Wireless Technologies Pub Date : 1900-01-01 DOI:10.1109/ecwt.2007.4404031

S. Narahashi, Y. Suzuki, T. Nojima

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引用次数: 0

摘要

本文提出了一种2 ghz频段氮化镓(GaN)高电子迁移率晶体管(HEMT)放大器，作为移动基站接收器低温前端(CRFE)的一部分，低温冷却至60 K。GaN HEMT放大器的输出功率为3w，最大功率增加效率为62%，漏极偏置为50 V，可用于ab类工作。本文报道的结果是针对2 ghz频段CRFE使用的低温冷却GaN HEMT放大器性能的首次报道。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2-GHz Band Cryogenically-Cooled GaN HEMT Amplifier for Mobile Base Station Receivers

This paper presents a 2-GHz band gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier cryogenically cooled to 60 K as a part of the cryogenic receiver front-end (CRFE) for mobile base station receivers. The GaN HEMT amplifier attains the output power of 3 W and the maximum power added efficiency of 62% with a 50 V drain bias for class-AB operation. The results reported herein are the first on the performance of a cryogenically cooled GaN HEMT amplifier aiming at use in a 2-GHz band CRFE.

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2007 European Conference on Wireless Technologies

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