采用0.18 /spl mu/m CMOS工艺的新型耗尽层扩展晶体管(DETs)， 1.4 dB插入损耗，5 GHz发射/接收开关

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015434

T. Ohnakado, A. Furukawa, M. Ono, E. Taniguchi, S. Yamakawa, K. Nishikawa, T. Murakami, Y. Hashizume, K. Sugahara, T. Oomori

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引用次数: 16

摘要

提出了一种用于射频开关电路的新型耗尽层扩展晶体管(DET)，该晶体管在CMOS工艺中显著降低了硅衬底的结电容并增加了gnd通路电阻，并具有新的杂质谱图。只需增加一个掩模步，就可以与传统晶体管同时形成这种晶体管。利用该器件，在0.18 /spl mu/m CMOS工艺下实现了低1.4 dB插入损耗、5 GHz发射/接收开关。

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A 1.4 dB insertion-loss, 5 GHz transmit/receive switch utilizing novel depletion-layer-extended transistors (DETs) in 0.18 /spl mu/m CMOS process

A novel depletion-layer-extended transistor (DET) for the RF switch circuit is proposed in a CMOS process, which significantly reduces junction capacitance and increases GND-path resistance in the Si-substrate, with new impurity profiling. This transistor can be simultaneously formed with the conventional transistor with the addition of only one mask-step. By utilizing the DETs, a low 1.4 dB insertion-loss, 5 GHz transmit/receive switch in a 0.18 /spl mu/m CMOS process is realized.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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