用于130纳米CMOS技术的TVWS应用的宽带差分低噪声放大器

2019 International SoC Design Conference (ISOCC) Pub Date : 2019-10-06 DOI:10.1109/ISOCC47750.2019.9078520

Huo Yingge, Imran Ali, Kangyoon Lee

{"title":"用于130纳米CMOS技术的TVWS应用的宽带差分低噪声放大器","authors":"Huo Yingge, Imran Ali, Kangyoon Lee","doi":"10.1109/ISOCC47750.2019.9078520","DOIUrl":null,"url":null,"abstract":"In this paper, a wideband differential low noise amplifier (LNA) is presented for TV white space (TVWS) applications. For wideband input matching and high gain over 470~698 MHz TVWS bandwidth, a common-source (CS) complementary resistive shunt feedback amplifier is used in the proposed LNA. This LNA structure also reduces noise. The design achieves 26.4 dB gain and 1.75 dB noise figure. It consumes 22.56 mW power and draws 18.8 mA current from 1.2 V supply. It is integrated into TVWS transceiver with 130 nm CMOS technology and it occupies 531 × 279 μm² chip area.","PeriodicalId":113802,"journal":{"name":"2019 International SoC Design Conference (ISOCC)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Wideband Differential Low Noise Amplifier for TVWS Applications in 130 nm CMOS Technology\",\"authors\":\"Huo Yingge, Imran Ali, Kangyoon Lee\",\"doi\":\"10.1109/ISOCC47750.2019.9078520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a wideband differential low noise amplifier (LNA) is presented for TV white space (TVWS) applications. For wideband input matching and high gain over 470~698 MHz TVWS bandwidth, a common-source (CS) complementary resistive shunt feedback amplifier is used in the proposed LNA. This LNA structure also reduces noise. The design achieves 26.4 dB gain and 1.75 dB noise figure. It consumes 22.56 mW power and draws 18.8 mA current from 1.2 V supply. It is integrated into TVWS transceiver with 130 nm CMOS technology and it occupies 531 × 279 μm² chip area.\",\"PeriodicalId\":113802,\"journal\":{\"name\":\"2019 International SoC Design Conference (ISOCC)\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International SoC Design Conference (ISOCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISOCC47750.2019.9078520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC47750.2019.9078520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种适用于电视白色空间(TVWS)的宽带差分低噪声放大器(LNA)。为了在470~698 MHz的TVWS带宽范围内实现宽带输入匹配和高增益，所提出的LNA采用了共源互补电阻分流反馈放大器。这种LNA结构还可以降低噪声。该设计实现了26.4 dB增益和1.75 dB噪声系数。它消耗22.56兆瓦的功率，从1.2 V电源中吸取18.8毫安的电流。该芯片采用130 nm CMOS技术集成到TVWS收发器中，芯片面积为531 × 279 μm²。

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A Wideband Differential Low Noise Amplifier for TVWS Applications in 130 nm CMOS Technology

In this paper, a wideband differential low noise amplifier (LNA) is presented for TV white space (TVWS) applications. For wideband input matching and high gain over 470~698 MHz TVWS bandwidth, a common-source (CS) complementary resistive shunt feedback amplifier is used in the proposed LNA. This LNA structure also reduces noise. The design achieves 26.4 dB gain and 1.75 dB noise figure. It consumes 22.56 mW power and draws 18.8 mA current from 1.2 V supply. It is integrated into TVWS transceiver with 130 nm CMOS technology and it occupies 531 × 279 μm² chip area.

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2019 International SoC Design Conference (ISOCC)

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