高速谐振腔增强了硅反射衬底上1550 nm工作的锗光电探测器

2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859) Pub Date : 2004-10-04 DOI:10.1109/MWP.2004.1396892

O. Dosunmu, M. Emsley, M. Unlu, D. D. Cannon, L. Kimerling

{"title":"高速谐振腔增强了硅反射衬底上1550 nm工作的锗光电探测器","authors":"O. Dosunmu, M. Emsley, M. Unlu, D. D. Cannon, L. Kimerling","doi":"10.1109/MWP.2004.1396892","DOIUrl":null,"url":null,"abstract":"We have fabricated high-speed resonant-cavity-enhanced Ge-on-SOI photodetectors, operating at 1550 nm and demonstrating a 3 dB bandwidth of 12.8 GHz. When optimized, these high-speed detectors should exhibit a quantum efficiency of 75% at 1550 nm.","PeriodicalId":137956,"journal":{"name":"2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High speed resonant cavity enhanced Ge photodetectors on Si reflecting substrates for 1550 nm operation\",\"authors\":\"O. Dosunmu, M. Emsley, M. Unlu, D. D. Cannon, L. Kimerling\",\"doi\":\"10.1109/MWP.2004.1396892\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated high-speed resonant-cavity-enhanced Ge-on-SOI photodetectors, operating at 1550 nm and demonstrating a 3 dB bandwidth of 12.8 GHz. When optimized, these high-speed detectors should exhibit a quantum efficiency of 75% at 1550 nm.\",\"PeriodicalId\":137956,\"journal\":{\"name\":\"2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859)\",\"volume\":\"2014 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWP.2004.1396892\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWP.2004.1396892","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们制作了高速谐振腔增强的Ge-on-SOI光电探测器，工作波长为1550 nm，带宽为12.8 GHz，带宽为3db。经过优化后，这些高速探测器在1550 nm处的量子效率应为75%。

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High speed resonant cavity enhanced Ge photodetectors on Si reflecting substrates for 1550 nm operation

We have fabricated high-speed resonant-cavity-enhanced Ge-on-SOI photodetectors, operating at 1550 nm and demonstrating a 3 dB bandwidth of 12.8 GHz. When optimized, these high-speed detectors should exhibit a quantum efficiency of 75% at 1550 nm.

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来源期刊

2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859)

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