硅锗分子束外延生长中的热现象

InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88 Pub Date : 1988-05-11 DOI:10.1109/ITHERM.1988.28700

F. G. Allen

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引用次数: 0

摘要

热活化过程控制着分子束生长外延膜的清洗、生长和掺杂的几乎所有步骤。本文讨论了在新兴的硅锗薄膜MBE生长技术中重要的五个过程的温度依赖性:(1)衬底初始清洗过程中的SiO/sub /去除，(2)正常MBE生长过程中的表面扩散，(3)生长过程中掺杂剂的“粘附”系数蒸发，(4)固相外延再生过程和(5)Si-Ge应变超晶格中应变的热释放。

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Thermal phenomena in silicon-germanium molecular beam epitaxial growth

Thermally activated processes control nearly all steps in the cleaning, growth and doping of molecular-beam-grown epitaxial films. The temperature dependence of five such processes important in the emerging technology of MBE growth of silicon and germanium films is discussed: (1) SiO/sub 2/ removal in the initial cleaning of the substrate, (2) surface diffusion during normal MBE growth, (3) the 'sticking' coefficient of dopants evaporated during growth, (4) the process of solid phase epitaxial regrowth and (5) thermal relief of strain in Si-Ge strained superlattices.<>

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InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88

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