高压空间配电系统中基于SiC的闭锁限流器

D. Marroquí, A. Garrigós, J. Blanes, R. Gutiérrez, E. Maset
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引用次数: 1

摘要

本研究提出了一种新颖的锁存限流器拓扑结构,基于n沟道碳化硅(SiC) MOSFET作为主要开关元件。该设计仅使用分立元件进行,没有数字控制器。该设计已通过仿真和样机验证。在1000V下进行了测试,修改了限制时间、限流值,并最终检查了系统的正常运行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SiC Based Latching Current Limiter for High Voltage Space Power Distribution Systems
This study presents a novel Latching Current Limiter topology, based on a N-channel Silicon Carbide (SiC) MOSFET as the main switching element. The design has been carried out using only discrete components, without digital controllers. This design has been validated by simulation and with a prototype. Tests have been performed at 1000V, modifying the limitation times, current-limiting values and eventually checking the proper operation of the system.
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