D. Marroquí, A. Garrigós, J. Blanes, R. Gutiérrez, E. Maset
{"title":"高压空间配电系统中基于SiC的闭锁限流器","authors":"D. Marroquí, A. Garrigós, J. Blanes, R. Gutiérrez, E. Maset","doi":"10.1109/ECCE.2018.8557760","DOIUrl":null,"url":null,"abstract":"This study presents a novel Latching Current Limiter topology, based on a N-channel Silicon Carbide (SiC) MOSFET as the main switching element. The design has been carried out using only discrete components, without digital controllers. This design has been validated by simulation and with a prototype. Tests have been performed at 1000V, modifying the limitation times, current-limiting values and eventually checking the proper operation of the system.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"SiC Based Latching Current Limiter for High Voltage Space Power Distribution Systems\",\"authors\":\"D. Marroquí, A. Garrigós, J. Blanes, R. Gutiérrez, E. Maset\",\"doi\":\"10.1109/ECCE.2018.8557760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study presents a novel Latching Current Limiter topology, based on a N-channel Silicon Carbide (SiC) MOSFET as the main switching element. The design has been carried out using only discrete components, without digital controllers. This design has been validated by simulation and with a prototype. Tests have been performed at 1000V, modifying the limitation times, current-limiting values and eventually checking the proper operation of the system.\",\"PeriodicalId\":415217,\"journal\":{\"name\":\"2018 IEEE Energy Conversion Congress and Exposition (ECCE)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Energy Conversion Congress and Exposition (ECCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCE.2018.8557760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCE.2018.8557760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SiC Based Latching Current Limiter for High Voltage Space Power Distribution Systems
This study presents a novel Latching Current Limiter topology, based on a N-channel Silicon Carbide (SiC) MOSFET as the main switching element. The design has been carried out using only discrete components, without digital controllers. This design has been validated by simulation and with a prototype. Tests have been performed at 1000V, modifying the limitation times, current-limiting values and eventually checking the proper operation of the system.