一种快速瞬态无电容低差调节器

J. Qu, C. Wu
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引用次数: 0

摘要

LDO作为集成电路的基本模块,广泛应用于数模和模数转换电路中。根据这些电路对电源管理芯片的要求,本文提出了一种快速暂态无电容低差稳压器。为了提高瞬态响应,在误差放大器和功率晶体管之间增加了推挽缓冲器。此外,采用瞬态增强电路有效抑制过调电压和欠调电压,缩短了恢复时间。在台积电180nm CMOS工艺中验证了无电容LDO。仿真结果表明,当负载电流在1us内由1mA变为100mA时,输出欠冲电压为83mV,恢复时间为1.5us;当负载电流在1us内由100mA变为1mA时,输出过调电压为80mV,恢复时间为1.7us。整个系统的电源抑制在1kHz时为-60dB,在1MHz时仍可达到-17dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A fast-transient capacitorless low dropout regulator
As a basic module of integrated circuits, LDO is widely used in digital-to-analog and analog-to-digital conversion circuits. Based on the requirements of these circuits for power management chips, a fast-transient capacitorless low dropout regulator is proposed in this paper. To enhance the transient response, a push-pull buffer is added between the error amplifier and the power transistor. In addition, a transient enhancement circuit is used to effectively suppress the undershoot voltage and overshoot voltage and reduce the recovery time. The capacitorless LDO is verified in TSMC 180nm CMOS process. The simulation results show that when the load current changes from 1mA to 100mA within 1us, the output undershoot voltage is 83mV, and the recovery time is 1.5us; When the load current changes from 100mA to 1mA within 1us, the output overshoot voltage is 80mV and the recovery time is 1.7us. The power supply rejection of the whole system is -60dB at 1kHz and can still reach -17dB at 1MHz.
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