V. Venezia, R. Duffy, L. Pelaz, M. Aboy, A. Heringa, P. Griffin, C. Wang, M. Hopstaken, Y. Tamminga, T. Dao, B. Pawlak, F. Roozeboom
{"title":"预非晶硅低温退火过程中掺杂剂重分布效应","authors":"V. Venezia, R. Duffy, L. Pelaz, M. Aboy, A. Heringa, P. Griffin, C. Wang, M. Hopstaken, Y. Tamminga, T. Dao, B. Pawlak, F. Roozeboom","doi":"10.1109/IEDM.2003.1269328","DOIUrl":null,"url":null,"abstract":"The time evolution of B, As, and In doping profiles during and after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As and In segregate during SPER by a sweep of the regrowing interface. In the case of B, significant B diffusion in a-Si occurs during SPER, while afterwards B uphill diffusion dominates. With the aid of atomistic simulation we have identified a temperature dependent time to maximum uphill B diffusion.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Dopant redistribution effects in preamorphized silicon during low temperature annealing\",\"authors\":\"V. Venezia, R. Duffy, L. Pelaz, M. Aboy, A. Heringa, P. Griffin, C. Wang, M. Hopstaken, Y. Tamminga, T. Dao, B. Pawlak, F. Roozeboom\",\"doi\":\"10.1109/IEDM.2003.1269328\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The time evolution of B, As, and In doping profiles during and after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As and In segregate during SPER by a sweep of the regrowing interface. In the case of B, significant B diffusion in a-Si occurs during SPER, while afterwards B uphill diffusion dominates. With the aid of atomistic simulation we have identified a temperature dependent time to maximum uphill B diffusion.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269328\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dopant redistribution effects in preamorphized silicon during low temperature annealing
The time evolution of B, As, and In doping profiles during and after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As and In segregate during SPER by a sweep of the regrowing interface. In the case of B, significant B diffusion in a-Si occurs during SPER, while afterwards B uphill diffusion dominates. With the aid of atomistic simulation we have identified a temperature dependent time to maximum uphill B diffusion.
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