二氧化硅谐振器上高性能铌酸锂的主动反射器

Lisha Shi, G. Piazza
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引用次数: 8

摘要

本文报道了基于二氧化硅(SiO2)上x切割离子切片铌酸锂(LN)薄膜的横向振动谐振器(LVRs)中用于增强机电耦合(kt2)和抑制杂散模式的主动反射器的设计和演示。通过在谐振板两端增加电极的四分之一波长(λ/4)区域,形成主动反射器(由于向其施加了电信号)以提高器件性能。采用100%金属覆盖λ/4扩展的优化主动反射器使:(i) kt2的显著改进,(ii)杂散模式抑制,以及对处理的鲁棒性(iii)失调和(iv)过/欠蚀刻。尽管在制造过程中存在0.5 μm的偏差和超过0.5 μm的过刻,但与传统设计(无主动反射器)相比,kt2性能提高了2倍,并显著抑制了带内杂散振动。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Active reflectors for high performance lithium niobate on silicon dioxide resonators
This paper reports on the design and demonstration of active reflectors for enhancing the electromechanical coupling (kt2) and suppressing spurious modes in Laterally Vibrating Resonators (LVRs) based on X-cut ion-sliced Lithium Niobate (LN) thin film on silicon dioxide (SiO2). By adding electroded quarter wavelength (λ/4) regions at the two ends of the resonant plate, active reflectors (since an electrical signal is applied to them) are formed to improve the device performance. Optimized active reflectors that resort to 100% metal coverage of the λ/4 extensions enable: (i) a considerable improvement of kt2, (ii) spurious mode suppression, and robustness to processing (iii) misalignment and (iv) over/under-etching. 2X improvement in kt2 and significant suppression of in-band spurious vibrations were attained with respect to the conventional design (without active reflectors) despite 0.5 μm misalignment and more than 0.5 μm overetch in the fabrication process.
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