HEMT前向传输系数的偏置和温度依赖性实验研究

2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS) Pub Date : 2021-10-20 DOI:10.1109/TELSIKS52058.2021.9606356

M. Alim, C. Gaquière, G. Crupi

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引用次数: 0

摘要

本研究的目的是观察温度对采用各种技术的高电子迁移率晶体管(hemt)正向传输系数(S21)的影响。在环境温度从-40°C到150°C的不同偏置条件下，对六种不同的器件进行了分析。当温度升高时，氮化镓基hemt的S21低频幅度显著降低。另一方面，在gaas基hemt中已经确定了一个工作偏置点，该偏置点的大小对温度不敏感。

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Experimental Investigation on the Bias and Temperature Dependence of the Forward Transmission Coefficient for HEMT Technologies

The goal of this research is to look at the effects of temperature on the forward transmission coefficient (S21) of high electron-mobility transistors (HEMTs), employing various technologies. The analysis is carried out on six different devices under different bias conditions with the ambient temperature varied from -40°C to 150°C. The low-frequency magnitude of S21 is significantly reduced in GaN-based HEMTs when the temperature is increased. On the other hand, an operating bias point where this magnitude is temperature insensitive has been identified in GaAs-based HEMTs.

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2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS)

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