场效应晶体管稳定性分析的能量电容建模

M. Schmidt-Szatowski
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引用次数: 4

摘要

某些工业标准晶体管模型在亚阈值模式下表现出电容的非互易性。这种行为违反了能量守恒定律,阻碍了MMIC电路的稳定性分析,特别是C类放大器。我们通过引入一种新的建模方法来规避这一限制:基于能量的电容建模。我们不是模拟电容或电荷,而是模拟储存在晶体管中的电能。从这个量出发,我们用微分法推导出电荷和电容的表达式。我们将这种方法应用于LDMOS器件,在保持电荷和能量守恒的同时,取得了非常好的精度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Energy-Based Capacitance Modeling for Field-Effect Transistor Stability Analysis
Certain industry-standard transistor models exhibit nonreciprocity of capacitances in the subthreshold mode. This behavior violates the law of energy conservation and impedes stability analysis of MMIC circuits, especially class C amplifiers. We circumvented this limitation by introducing a new modeling approach: energy-based capacitance modeling. Instead of modeling capacitances or charges, we model the electrical energy stored in the transistor. From this quantity we derive expressions for charges and capacitances by means of differentiation. We applied this approach to an LDMOS device and achieved very good accuracy, while maintaining charge and energy conservation.
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