现代深亚微米CMOS技术中基于压控振荡器的ADC研究进展

Hon Cheong Hor, L. Siek
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引用次数: 12

摘要

CMOS技术的不断扩展促使研究人员寻找能够在更低电源电压和更小器件尺寸下良好工作的新型ADC架构。基于vco的adc由于其高度数字密集的电路结构、固有的噪声整形特性以及抗混叠特性而成为一种有吸引力的解决方案。然而,压控振荡器电压频率特性的非线性特性严重限制了基于压控振荡器的ADC的性能。本文介绍了基于VCO的ADC的最新研究进展,采用了不同的抑制VCO非线性的技术。每一种技术的优点和缺点将被回顾。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Review on VCO based ADC in modern deep submicron CMOS technology
The continuous scaling in CMOS technology has driven researchers to look for new ADC architecture that can work well in lower supply voltage and smaller device dimension. VCO-based ADCs have emerged as an attractive solution due to its highly digital intensive circuit architecture, inherent noise shaping characteristic, as well as anti-aliasing property. However, the nonlinear behavior of VCO's voltage-to-frequency characteristic has severe limitation on the performance of VCO-based ADC. This paper presents recent development in VCO-based ADC with different VCO nonlinearity suppression techniques. The advantage and disadvantage of each of these techniques will be reviewed.
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