采用上下溅射直流磁控管对a-SiC和a-SiC:H薄膜进行了SIMS和螺旋钻的研究,对其光学性能的影响

M. Ouadfel, A. Keffous, A. Cheriet, C. Yaddaden, N. Gabouze, Y. Belkacem, A. Khelloufi, H. Menari, M. Siad
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引用次数: 3

摘要

本文讨论了氢化和非氢化非晶碳化硅薄膜(a-SiC:H, a-SiC)的早期生长研究。利用6H-SiC多晶靶在p-Si(100)和玻璃衬底上,采用一种新的结构(上下)溅射直流磁控技术,在室温下制备了样品。红外光谱显示在740 cm-1处存在一个条带,对应于非晶碳化硅的Si-C拉伸模式。a- sic:H和a- sic的SIMS和AES谱均呈c型。与传统结构(Down-up)制备的薄膜相比,这种结构(Up-down)制备的薄膜具有化学计量性,其比值为28Si/12C = 0.95。a-SiC: H和a-SiC的光隙分别为1.84 eV和1.48 eV。这种光学间隙的行为可能与薄膜中存在的氢浓度或其他杂质导致光学间隙减小有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SIMS and auger investigation of thin a-SiC and a-SiC:H films by Up-Down sputtering DC magnetron, impact on optical properties
This article deals with an early growth study of hydrogenated and non-hydrogenated amorphous silicon carbide thin films (a-SiC:H, a-SiC). Sample have been elaborated at room temperature by a new configuration (Up-down) sputtering d.c. magnetron technique, using a 6H-SiC polycrystalline target onto p-Si(100) and glass substrates. The infrared spectra reveal the existence of a band located at 740 cm-1, which corresponds to Si-C stretching mode of amorphous silicon carbide. The SIMS and AES profiles show a c-face for both a-SiC:H and a-SiC. Films elaborated with this configuration (Up-down) are stoichiometric, with a ratio 28Si/12C = 0.95, compared to the one elaborated with conventional configuration (Down-up), which is 1.75. The optical gap is 1.84 eV and 1.48 eV for a-SiC: H and a-SiC respectively. This behavior of optical gap may be related to the hydrogen concentration present in the films or other impurities inducing such a decrease in optical gap.
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