基于28纳米CMOS FDSOI的85 - 95 ghz差分放大器设计

2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications Pub Date : 2016-06-06 DOI:10.1109/GSMM.2016.7500302

A. Vahdati, M. Varonen, D. Parveg, D. Karaca, K. Halonen

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引用次数: 8

摘要

本文介绍了一种基于28纳米CMOS FDSOI的w波段两级差分放大器的设计和测量结果。在90 GHz时，放大器的增益为13.8 dB，输入和输出回波损耗分别为-8.0 dB和-11 dB。该放大器在中心频率处获得+5 dBm的饱和输出功率和0 dBm的1 db输出压缩点。在85 ~ 95 GHz范围内，增益优于12.3 dB，平均噪声系数(NF)为8 dB。该设计从1 v电源消耗37.5 mW功率，设计的有效面积为0.017 mm2。

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Design of an 85–95-GHz differential amplifier in 28-nm CMOS FDSOI

This paper presents the design and measurement results of a W-band two-stage differential amplifier using transformers in 28-nm CMOS FDSOI. At 90 GHz, the amplifier achieves 13.8 dB gain, and the input and output return loss are -8.0 dB and -11 dB, repectively. The amplifier obtains +5 dBm saturated output power and 1-dB output compression point of 0 dBm at the centre frequency. From 85 to 95 GHz, the gain is better than 12.3 dB and the average noise figure (NF) is 8 dB. The design consumes 37.5 mW power from a 1-V supply and the active area of the design is 0.017 mm2.

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2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

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