Growth and characterization of (Zn, Sn, Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy

We fabricated (Zn, Sn, Ga)As2 thin films grown on semi-insulating GaAs(001) substrate by molecular beam epitaxy and characterized their structural, compositional and electrical properties in terms of conduction-type control. The X-ray diffraction peaks of (Zn, Sn, Ga)As2 films which shift toward lower angle compared with that of (Zn, Sn)As2 film indicate that Ga incorporating in (Zn, Sn)As2 decrease their lattice constants. Compositional analysis by electron-probe micro analyzer (EPMA) indicated that the composition ratios of Zn to all the cation sites are smaller than that of Sn. Hall effect measurements of these (Zn, Sn, Ga)As2 thin films showed n-type conductivity. These results suggest that Ga atoms are substituted for Zn atoms more than Sn atoms and change their conduction type from p-type to n-type.