低压静电放电引起的脉冲电磁干扰效应模型

Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting Pub Date : 1993-10-02 DOI:10.1109/IAS.1993.299099

M. Honda

{"title":"低压静电放电引起的脉冲电磁干扰效应模型","authors":"M. Honda","doi":"10.1109/IAS.1993.299099","DOIUrl":null,"url":null,"abstract":"A model for impulsive electromagnetic interference (EMI) effects caused by relatively low-voltage electrostatic discharge (ESD) on digital electronic systems is proposed. The power of impulsive EMI is governed by the product of the following three parameters: charged voltage, rise time of the discharge current, and susceptibility of the system.<<ETX>>","PeriodicalId":345027,"journal":{"name":"Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A model for impulsive EMI effects caused by low voltage ESD\",\"authors\":\"M. Honda\",\"doi\":\"10.1109/IAS.1993.299099\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A model for impulsive electromagnetic interference (EMI) effects caused by relatively low-voltage electrostatic discharge (ESD) on digital electronic systems is proposed. The power of impulsive EMI is governed by the product of the following three parameters: charged voltage, rise time of the discharge current, and susceptibility of the system.<<ETX>>\",\"PeriodicalId\":345027,\"journal\":{\"name\":\"Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.1993.299099\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1993.299099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一个相对低压静电放电(ESD)对数字电子系统产生脉冲电磁干扰(EMI)效应的模型。脉冲电磁干扰的功率由以下三个参数的乘积决定:充电电压、放电电流的上升时间和系统的磁化率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A model for impulsive EMI effects caused by low voltage ESD

A model for impulsive electromagnetic interference (EMI) effects caused by relatively low-voltage electrostatic discharge (ESD) on digital electronic systems is proposed. The power of impulsive EMI is governed by the product of the following three parameters: charged voltage, rise time of the discharge current, and susceptibility of the system.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting

自引率

0.00%

发文量