{"title":"fet晶体管电子负载原理图解的计算","authors":"R. Zaitsev","doi":"10.1109/KhPIWeek53812.2021.9569987","DOIUrl":null,"url":null,"abstract":"The introduction of electronic load for testing high-accurate low-voltage sources (solar cells) requires thorough reviewing not only the circuit construction, but also thermal and mechanical constructions. Adherence to the indications and principles, which are set out in this article, will provide the load with the ability to work at high power, and in the same time maintain good characteristics and reliability.","PeriodicalId":365896,"journal":{"name":"2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Calculation of the Schematic Solution of FET-transistor Electronic Load\",\"authors\":\"R. Zaitsev\",\"doi\":\"10.1109/KhPIWeek53812.2021.9569987\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The introduction of electronic load for testing high-accurate low-voltage sources (solar cells) requires thorough reviewing not only the circuit construction, but also thermal and mechanical constructions. Adherence to the indications and principles, which are set out in this article, will provide the load with the ability to work at high power, and in the same time maintain good characteristics and reliability.\",\"PeriodicalId\":365896,\"journal\":{\"name\":\"2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/KhPIWeek53812.2021.9569987\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/KhPIWeek53812.2021.9569987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Calculation of the Schematic Solution of FET-transistor Electronic Load
The introduction of electronic load for testing high-accurate low-voltage sources (solar cells) requires thorough reviewing not only the circuit construction, but also thermal and mechanical constructions. Adherence to the indications and principles, which are set out in this article, will provide the load with the ability to work at high power, and in the same time maintain good characteristics and reliability.