基于l1范数惩罚的有限样本鲁棒空间相关提取

M. Gao, Zuochang Ye, Dajie Zeng, Yan Wang, Zhiping Yu
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引用次数: 1

摘要

随机过程变化通常由位置相关部分和距离相关部分组成。虽然准确提取工艺变化是工艺改进和电路性能预测的先决条件,但从有限数量的硅数据中表征这种复杂的空间随机过程并非易事。为此,克里格模型被引入了硅学界。本文提出了一个带有l1范数惩罚的改进kriging模型,提高了模型的鲁棒性。利用最小角度回归(LAR)求解核心优化子问题,可以有效地表征该模型。数值实验结果表明,模型精度提高了3倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Robust spatial correlation extraction with limited sample via L1-norm penalty
Random process variations are often composed of location dependent part and distance dependent correlated part. While an accurate extraction of process variation is a prerequisite of both process improvement and circuit performance prediction, it is not an easy task to characterize such complicated spatial random process from a limited number of silicon data. For this purpose, kriging model was introduced to silicon society. This work forms a modified kriging model with L1-norm penalty which offers improved robustness. With the help of Least Angle Regression (LAR) in solving a core optimization sub-problem, this model can be characterized efficiently. Some promising results are presented with numerical experiments where a 3X improvement in model accuracy is shown.
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