T. Takagi, E. Nakayama, T. Ta, S. Kameda, N. Suematsu, K. Tsubouchi
{"title":"一种相对带宽为158%的新型平面型宽带CMOS片上平衡器","authors":"T. Takagi, E. Nakayama, T. Ta, S. Kameda, N. Suematsu, K. Tsubouchi","doi":"10.1109/APMC.2012.6421538","DOIUrl":null,"url":null,"abstract":"A novel planar type broadband balun having a symmetrical structure has been proposed. Considering a lossless and uniform material, balun operation is analyzed and impedance matching condition is formulated. Applying the proposed balun configuration, and using CMOS multi-layer structure, a CMOS on-chip balun has been fabricated. The fabricated balun has achieved ultra-broadband performance. Measured characteristics of the balun are return loss of more than 8dB, insertion loss of 1.5 ~ 6.3dB from the unbalanced to the balanced ports, and the amplitude difference and phase difference between the balanced ports of -0.2 ~ +1.5dB and 173.5 ~ 179deg, respectively, over the frequency range of 13 ~ 110GHz.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A novel planar type broadband CMOS on-chip balun with relative bandwidth of 158%\",\"authors\":\"T. Takagi, E. Nakayama, T. Ta, S. Kameda, N. Suematsu, K. Tsubouchi\",\"doi\":\"10.1109/APMC.2012.6421538\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel planar type broadband balun having a symmetrical structure has been proposed. Considering a lossless and uniform material, balun operation is analyzed and impedance matching condition is formulated. Applying the proposed balun configuration, and using CMOS multi-layer structure, a CMOS on-chip balun has been fabricated. The fabricated balun has achieved ultra-broadband performance. Measured characteristics of the balun are return loss of more than 8dB, insertion loss of 1.5 ~ 6.3dB from the unbalanced to the balanced ports, and the amplitude difference and phase difference between the balanced ports of -0.2 ~ +1.5dB and 173.5 ~ 179deg, respectively, over the frequency range of 13 ~ 110GHz.\",\"PeriodicalId\":359125,\"journal\":{\"name\":\"2012 Asia Pacific Microwave Conference Proceedings\",\"volume\":\"122 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Asia Pacific Microwave Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APMC.2012.6421538\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Asia Pacific Microwave Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC.2012.6421538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel planar type broadband CMOS on-chip balun with relative bandwidth of 158%
A novel planar type broadband balun having a symmetrical structure has been proposed. Considering a lossless and uniform material, balun operation is analyzed and impedance matching condition is formulated. Applying the proposed balun configuration, and using CMOS multi-layer structure, a CMOS on-chip balun has been fabricated. The fabricated balun has achieved ultra-broadband performance. Measured characteristics of the balun are return loss of more than 8dB, insertion loss of 1.5 ~ 6.3dB from the unbalanced to the balanced ports, and the amplitude difference and phase difference between the balanced ports of -0.2 ~ +1.5dB and 173.5 ~ 179deg, respectively, over the frequency range of 13 ~ 110GHz.