{"title":"大功率毫米波产生用w波段氮化镓输入二极管","authors":"Lina Cao, Hansheng Ye, Jingshan Wang, P. Fay","doi":"10.1109/NAECON46414.2019.9058119","DOIUrl":null,"url":null,"abstract":"The DC and large signal characteristics of a GaN IMPATT diode designed for operation at W-band are investigated using Sentaurus TCAD simulations. The impact ionization model for GaN is calibrated using measured impact ionization coefficients of both electrons and holes, and both field- and carrier-concentration dependent velocity-field relationships are considered for accurate simulation. Large signal simulation results show that the IMPATT diode design evaluated is capable of generating an output RF power larger than 1 MW/cm2 from 80 GHz to 120 GHz with an efficiency larger than 18%.","PeriodicalId":193529,"journal":{"name":"2019 IEEE National Aerospace and Electronics Conference (NAECON)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"W-Band GaN IMPATT Diodes for High Power Millimeter-Wave Generation\",\"authors\":\"Lina Cao, Hansheng Ye, Jingshan Wang, P. Fay\",\"doi\":\"10.1109/NAECON46414.2019.9058119\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The DC and large signal characteristics of a GaN IMPATT diode designed for operation at W-band are investigated using Sentaurus TCAD simulations. The impact ionization model for GaN is calibrated using measured impact ionization coefficients of both electrons and holes, and both field- and carrier-concentration dependent velocity-field relationships are considered for accurate simulation. Large signal simulation results show that the IMPATT diode design evaluated is capable of generating an output RF power larger than 1 MW/cm2 from 80 GHz to 120 GHz with an efficiency larger than 18%.\",\"PeriodicalId\":193529,\"journal\":{\"name\":\"2019 IEEE National Aerospace and Electronics Conference (NAECON)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE National Aerospace and Electronics Conference (NAECON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAECON46414.2019.9058119\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE National Aerospace and Electronics Conference (NAECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON46414.2019.9058119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
W-Band GaN IMPATT Diodes for High Power Millimeter-Wave Generation
The DC and large signal characteristics of a GaN IMPATT diode designed for operation at W-band are investigated using Sentaurus TCAD simulations. The impact ionization model for GaN is calibrated using measured impact ionization coefficients of both electrons and holes, and both field- and carrier-concentration dependent velocity-field relationships are considered for accurate simulation. Large signal simulation results show that the IMPATT diode design evaluated is capable of generating an output RF power larger than 1 MW/cm2 from 80 GHz to 120 GHz with an efficiency larger than 18%.
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